ksd-t6o016-001 1 SNN5010D advanced n-ch power mosfet pin connection g d s to-252 d s g dc/dc converter applications features ? high voltage : bv dss =100v(min.) ? low c rss : c rss =130pf(typ.) ? low gate charge : qg=75nc(typ.) ? low r ds(on) : r ds(on) =26m (max.) ordering information marking diagram absolute maximum ratings (t c =25 c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v (t c =25 ) 50 drain current (dc) * i d (t c =100 ) 31 a drain current (pulsed) * i dm 150 a power dissipation p d 65 w avalanche current (single) i as 25 a single pulsed avalan che energy e as 173 mj avalanche current (repetitive) i ar 50 a repetitive avalanche energy e ar 6.5 mj junction temperature t j 150 storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max. unit junction-case r th(j-c) - 1.92 thermal resistance* junction-ambient r th(j-a) - 62.5 /w column 1,2 : device code column 3 : production information e.g.) yww -. yww : date code (year, week) type no. marking package code SNN5010D snn5010 to-252 snn 5010 yww
ksd-t6o016-001 2 electrical characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 100 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 1.7 2.5 3.4 v v ds =100v, v gs =0v - - 1 drain-source cut-off current i dss v ds =80v, v gs =0v, t j =125 - - 100 ua gate leakage current i gss v ds =0v, v gs = 20v - - 100 na v gs =10v, i d =25a - 21 26 drain-source on-resistance r ds(on) v gs =4.8v, i d =1a 130 200 m forward transfer conductance g fs v ds =40v, i d =25a - 30 - s input capacitance ciss - 2100 2310 output capacitance coss - 640 704 reverse transfer capacitance crss v gs =0v, v ds =25v, f=1mhz - 130 143 pf tu r n - o n de l ay t i m e t d(on) - 25 - rise time t r - 250 - turn-off delay time t d(off) - 110 - fall time t f v dd =50v, i d =50a r g =25 ? ? - 140 - ns total gate charge q g - 75 83 gate-source charge q gs - 13 15 gate-drain charge q gd v dd =80v, v gs =10v i d =50a ? - 36 40 nc source-drain diode ratings and characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current i s - - 50 source current (pulsed) i sm integral reverse diode in the mosfet - - 150 a forward voltage v sd v gs =0v, i s =50a - - 1.5 v reverse recovery time t rr - 100 - ns reverse recovery charge q rr i s =50a, v gs =0v di f /dt=100a/us - 380 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=0.5mh, i as =25a, v dd =10v, r g =25 ? , starting t j =25 pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature SNN5010D
ksd-t6o016-001 3 SNN5010D - electrical characteristic curves fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g - fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t6o016-001 4 c c SNN5010D electrical characteristic curves c fig.8 safe operating area fig. 9 i d - t c fig. 7 v dss - t j fig.10 safe operating area
ksd-t6o016-001 5 SNN5010D fig. 11 gate charge test circuit & waveform fig. 12 resistive switching test circuit & waveform fig. 13 e as test circuit & waveform
ksd-t6o016-001 6 SNN5010D fig. 14 diode reverse recovery time test circuit & waveform
ksd-t6o016-001 7 SNN5010D recommended land pattern [unit: mm] outline dimension unit : mm 4.60 1.50 2 . 5 0 7 . 0 0 7.00
ksd-t6o016-001 8 SNN5010D the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
|
